| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a structure for preventing stress from being easily applied to a semiconductor substrate and gate wiring even if the sidewall of the gate wiring is formed by a nitride film or the like, and to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device comprises a gate conductive layer 3 that is positioned on a silicon substrate 1, a lower layer oxide film 7 that is formed while covering the sidewall of the gate conductive layer and the surface of the silicon substrate, a stress relief film that includes a silicon film 10 for covering the sidewall of the gate conductive layer and the silicon substrate at the bottom of the gate conductive layer via the lower layer oxide film, and a sidewall external layer spacer 9 that covers the stress relief film and exposes an upper end at the upper portion of the sidewall of the gate conductive layer of the stress relief film and a bottom side end at the end of the bottom. The stress relief film has a silicon oxide film 11 that is positioned toward the inside from the upper end and the bottom side end so that the silicon oxide film is sandwiched from both the sides. COPYRIGHT: (C)2003,JPO
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