| 摘要 |
A semiconductor device and the methods used in production, particularly the insulating layer comprising creating a process atmosphere in a chamber for forming a fluidal insulating layer by: flowing an oxidising gas at an oxidising gas flow rate for forming an oxidising atmosphere, flowing a first carrier gas at a first carrier gas flow rate and flowing a second carrier gas at a second carrier gas flow rate, the second carrier gas flow rate being greater then the first carrier gas flow rate, forming the fluidal insulating layer on a substrate positioned in the chamber by flowing the oxidising gas at the oxidising gas flow rate, flowing the first carrier gas at the first carrier gas flow rate while carrying a first impurity including boron flowing at a first impurity flow rate, flowing the second carrier gas at the second carrier gas flow rate while carrying a second impurity including phosphorous flowing at a second impurity flow rate, the second carrier gas flow rate being greater than the first carrier gas flow rate, and flowing a silicon source material at a silicon source flow rate.
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