Multiple quantum well structure and method for manufacturing the same

摘要

A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. A bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer. The barrier layers, the intermediate level layers, and the well layers of the well-barrier sets are stacked by turns. Thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, and thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction. A method for manufacturing a multiple quantum well structure is also provided.

主权项

1. A multiple quantum well structure comprising:
a plurality of well-barrier sets stacked repeatedly along a direction, each of the well-barrier sets comprising following layers disposed in sequence:
a barrier layer;at least one intermediate level layer; anda well layer, wherein a bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer, wherein thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction, and the thickness of the intermediate level layer plus the thickness of the well layer in each of the well-barrier sets is substantially the same.