FORMING METHOD OF METALLIC LAYER PATTERN FOR SEMICONDUCTOR,申请号JP19780092911-传众专利搜索

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发明名称	FORMING METHOD OF METALLIC LAYER PATTERN FOR SEMICONDUCTOR
摘要
申请公布号	JPS5519873(A)	申请公布日期	1980.02.12
申请号	JP19780092911	申请日期	1978.07.28
申请人	MITSUBISHI ELECTRIC CORP	发明人	ENOMOTO TATSUYA;HARADA HIROJI
分类号	H01L21/302;H01L21/3065	主分类号	H01L21/302
代理机构		代理人
主权项
地址

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