发明名称 |
Display device and method for driving display device |
摘要 |
A display device includes a pixel which includes a first photosensor portion having a first photodiode for detecting visible light, which is provided together with a display element portion; and a pixel which includes a second photosensor portion having a second photodiode for detecting infrared rays, which is provided together with another display element portion. The second photosensor portion detects infrared rays included in external light, and selects an imaging element and adjusts sensitivity in accordance with the amount of infrared rays detected by the second photosensor portion. |
申请公布号 |
US9484381(B2) |
申请公布日期 |
2016.11.01 |
申请号 |
US201414579167 |
申请日期 |
2014.12.22 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Kurokawa Yoshiyuki;Ikeda Takayuki;Tamura Hikaru |
分类号 |
G06F3/042;H01L27/146;G01J1/18;G01J1/42;G06F3/041 |
主分类号 |
G06F3/042 |
代理机构 |
Robinson Intellectual Property Law Office |
代理人 |
Robinson Intellectual Property Law Office ;Robinson Eric J. |
主权项 |
1. A semiconductor device comprising a first pixel and a second pixel, the first pixel comprising:
a first semiconductor of a first transistor; a second semiconductor of a second transistor; an insulating film over the first semiconductor and the second semiconductor; a first photoelectric conversion element comprising a third semiconductor over the insulating film, the first photoelectric conversion element electrically connected to the first transistor; and a first element over the insulating film, the first element electrically connected to the second transistor; and the second pixel comprising: a fourth semiconductor of a third transistor; a fifth semiconductor of a fourth transistor; the insulating film over the fourth semiconductor and the fifth semiconductor; a second photoelectric conversion element comprising a sixth semiconductor over the insulating film, the second photoelectric conversion element electrically connected to the third transistor; and a second element over the insulating film, the second element electrically connected to the fourth transistor, wherein the first photoelectric conversion element is configured to detect visible light, wherein a sensitivity of the first photoelectric conversion element is adjustable, and wherein the second photoelectric conversion element is configured to detect an infrared ray. |
地址 |
Kanagawa-ken JP |