发明名称 |
Anti-reflective material and patterning method |
摘要 |
The invention provides an anti-reflective material comprising a salt of a carboxyl-terminated fluorinated alkyl polyether compound with a water-soluble amino compound. A resist pattern is defined by forming anti-reflective layer of the anti-reflective material on a photoresist layer, exposing the photoresist layer to a desired pattern of light, removing the anti-reflective layer, and developing the photoresist layer. A fine resist pattern having improved dimensional and alignment accuracies can be defined in a simple, efficient, reproducible manner without substantial environmental pollution. The invention is advantageously utilized in photo-lithography using photoresists.
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申请公布号 |
US5541037(A) |
申请公布日期 |
1996.07.30 |
申请号 |
US19940360045 |
申请日期 |
1994.12.20 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HATAKEYAMA, JUN;UMEMURA, MITSUO;KISHITA, HIROHUMI |
分类号 |
G03F7/11;C09D171/00;C09D171/02;C09K3/00;G03F7/09;H01L21/027;(IPC1-7):G03C1/825 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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