| 摘要 |
The invention discloses modifying the surface of a device to reduce transition region growth so that higher anneal temperatures can be used with the device to optimize dielectric quality, reduce defect density, and achieve the lowest possible dielectric leakage. One method of surface modification occurs when an impurity such as germanium is added to a silicon surface before deposition of TA 205 to serve as a diffusion barrier or retardant, which would inhibit the growth of the silicon TA205 transition region at higher temperatures and prevent capacitance degradation. Germanium is a good choice for this application because of its similarities to silicon. However, other materials can also serve as barriers.
|
