发明名称 II/VI-compound semiconductor light emitting device
摘要 A lifetime of a II/VI-compound semiconductor light emitting device can be extended. The II/VI-compound semiconductor light emitting device includes an active layer (4) and a p-side cladding layer (6). An active-layer side portion (26) of the p-side cladding layer (6) is formed as a lightly impurity-doped region or a non-doped region.
申请公布号 US5567960(A) 申请公布日期 1996.10.22
申请号 US19950429850 申请日期 1995.04.27
申请人 SONY CORPORATION 发明人 ISHIBASHI, AKIRA;ITO, SATOSHI;OKUYAMA, HIROYUKI;NAKANO, KAZUSHI;KONDO, KENJI;TAKEISHI, REIKO
分类号 H01L33/14;H01L33/20;H01L33/28;H01S5/00;H01S5/327;(IPC1-7):H01L33/00;H01S3/19 主分类号 H01L33/14
代理机构 代理人
主权项
地址