| 摘要 |
The X-coordinate of an X-axis search alignment mark (GMX) on a wafer (6) and the Y-coordinates of Y-axis search alignment marks (GMY1 and GMY2) on the wafer (6) are measured by laser step alignment (LSA) method, and the results of the measurement are processed to calculate approximate array coordinates of shot areas (ES1 to ES21) on the wafer (6). Die-by-die alignment and exposure are initiated from the shot area (ES11) that is the closest to the center of the array of all search alignment marks by using a TTR and two-beam interference (LIA) type alignment sensor having a predetermined capture range. At a shot area to be subsequently exposed, the amount of positional displacement between the reticle and the wafer is made to fall within the capture range relative to the initial positional displacement, thereby enabling alignment of high accuracy.
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