Two-phase ammonia, for metal organic chemical vapor deposition of gallium nitride based layers in production of semiconductor devices such as blue-emitting light emitting devices, has a liquid phase with a specified low water content

摘要

Two-phase ammonia, having a liquid phase with a specified low water content, is new. Two-phase ammonia, for supply together with an organometallic compound gas from a container to a reaction chamber for gallium nitride (GaN) semiconductor production, fills the container partially as a gaseous phase and partially as a liquid phase with a water content of /}0.5 vol.% (as determined by Fourier transform infrared spectroscopy). An Independent claim is also included for production of a GaN semiconductor having a substrate bearing a GaN layer produced using the above two-phase ammonia.