发明名称 THIN-FILM TRANSISTOR ARRAY STRUCTURE
摘要 PURPOSE: A TFT(Thin-Film Transistor) structure is provided to hold capacitance-coupling effect between a source electrode and a data line of a panel. CONSTITUTION: A TFT array structure comprises a Thin-Film Transistor(20), a data line(22), a scanning line(24), a pixel electrode(26) and an auxiliary electrode. The data line is connected to the drain of the Thin-Film Transistor, and the scanning line is connected to the gate of the Thin-Film Transistor. The scanning line is oriented substantially orthogonally with respect to the data line to form a plurality of rectangular pixels in matrix. A predetermined electrode(source electrode or auxiliary electrode) is formed at the place where the pixel electrode is close to the edge of the data line, and that predetermined electrode is coupled to the pixel electrode and located at a mask on which the data line is located. The capacitance-coupling effect generated between the pixel electrode and the data line is the same as the capacitance-coupling effect generated between the predetermined electrode and the data line. The performances of all pixels are uniform despite errors caused during the aligning process on the pixel electrode.
申请公布号 KR20020067968(A) 申请公布日期 2002.08.24
申请号 KR20020007241 申请日期 2002.02.08
申请人 AU OPTRONICS CORP. 发明人 CHANG WEI-CHIH;YU JIAN-SHEN
分类号 G02F1/133;(IPC1-7):G02F1/133 主分类号 G02F1/133
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