| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light emitting element that can stabilize shut-out of light in the horizontal direction. SOLUTION: This nitride-based semiconductor light emitting element is provided with an MQW light emitting layer 8, a p-type second clad layer 10 that is formed on the MQW light emitting layer 8 and is made of p-type AlGaN and constitutes a current passage, and a current block layer 14 that is formed as cover the sides of the current passage and is made of Si doped GaInN. The current block layer 14 is formed adjacent to the current passage, and an area excluding the vicinity of the current passage includes areas where the current block layer 14 is not formed.
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