Scheme for connector site spacing and resulting structures

摘要

A system and method for preventing cracks in a passivation layer is provided. In an embodiment a contact pad has a first diameter and an opening through the passivation layer has a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about 10 μm. In another embodiment, an underbump metallization is formed through the opening, and the underbump metallization has a third diameter that is greater than the first diameter by a second distance of about 5 μm. In yet another embodiment, a sum of the first distance and the second distance is greater than about 15 μm.

主权项

1. A semiconductor device comprising:
a contact pad with a first diameter, wherein the contact pad is circular; an underbump metallization in electrical connection with the contact pad, characterized in that the underbump metallization has a second diameter that is greater than the first diameter by a first distance of about 10 μm, wherein an interface between the contact pad and the underbump metallization has a second diameter that is less than the first diameter by at least about 10 μm; a first passivation layer located at least partially between the contact pad and the underbump metallization; and an external contact formed on the underbump metallization, wherein the external contact is a copper pillar with first sidewalls, wherein the first sidewalls are substantially aligned with second sidewalls of the underbump metallization.