发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
An isolation is formed in a part of a P-well of a semiconductor substrate. A resistor film as a first conductor member is formed on the isolation. An insulating film covering the resistor film except for contact formation regions and an upper electrode film as a second conductor member are formed simultaneously with the formation of a gate electrode and a gate oxide film. Silicide films of a refractory metal are formed on the respective surfaces of the gate electrode, N-type high-concentration diffusion layers, the contact formation regions of the resistor film, and the upper electrode film. By utilizing a salicide process, a resistor and an inductor each occupying a small area can be formed without lowering the resistance of the resistor film. A capacitor, the resistor, and like component are selectively allowed to function.
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申请公布号 |
US6603172(B1) |
申请公布日期 |
2003.08.05 |
申请号 |
US20000536301 |
申请日期 |
2000.03.27 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SEGAWA MIZUKI;YABU TOSHIKI;MATSUZAWA AKIRA |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L21/8234;H01L27/06;H01L27/118;(IPC1-7):H01L29/76;H01L29/94;H01L31/068;H01L31/113;H01L31/119 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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