| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a film containing rare earth elements low in a discharge voltage and non-emittable of unstable hydrogen. <P>SOLUTION: When forming a film of rare earth elements on a metal base 1 by using an electron beam deposition device 30, an insert crucible 37 is first put inside a recess formed on the upper part of a water cooled hearth 33 made of Cu, and a material 38 is put in the crucible 37. The material 38 contains rare earth elements. A vacuum chamber 31 is brought into a vacuum state to irradiate the material 38 with electron beams to heat and evaporate the material in an atmosphere containing hydrogen. Thus, an electron emitting layer 2 containing the rare earth hydride film is obtained. <P>COPYRIGHT: (C)2004,JPO</p> |
