发明名称
摘要 A memory matrix based on at least one cell array of column lines and row lines in which at least two column- or row-lines change their location relative to one another i.e. they cross-over one another. The memory matrix has cell arrays stacked in layers one above the other, and in which in each case the column- or row-lines of different layers lie mainly mutually adjacent, opposite one another.
申请公布号 KR100442460(B1) 申请公布日期 2004.07.30
申请号 KR20010041197 申请日期 2001.07.10
申请人 发明人
分类号 G11C11/14;G11C11/15;G11C7/18;G11C11/16;H01L21/8246;H01L27/105;H01L27/22;H01L43/08 主分类号 G11C11/14
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