APPARATUS AND METHODS FOR ELECTROSTATIC DISCHARGE PROTECTION OF RADIO FREQUENCY INTERFACES

摘要

Apparatus and methods for electrostatic discharge (ESD) protection of radio frequency circuits are provided. In certain configurations, an integrated circuit includes a first pin, a second pin, a forward ESD protection circuit, and a reverse ESD protection circuit. The forward ESD protection circuit includes one or more P+/N-EPI diodes, one or more ESD protection devices, and one or more P-EPI/N+ diodes electrically connected in series between the first pin and the second pin. A first P+/N-EPI diode of the one or more P+/N-EPI diodes includes an anode electrically connected to the first pin. The reverse ESD protection circuit comprising one or more P+/N-EPI diodes, one or more ESD protection devices, and one or more P-EPI/N+ diodes electrically connected in series between the second pin and the first pin. A first P-EPI/N+ diode of the one or more P-EPI/N+ diodes includes a cathode electrically connected to the first pin.

主权项

1. An integrated circuit comprising:
a first pin and a second pin; a substrate; and an electrostatic discharge (ESD) protection circuit over the substrate, wherein the ESD protection circuit comprises:
a forward ESD protection circuit configured to provide protection against a positive polarity ESD event received between the first pin and the second pin, wherein the forward ESD protection circuit comprises a first diode of a first type having an anode electrically connected to the first pin; anda reverse ESD protection circuit configured to provide protection against a negative polarity ESD event received between the first pin and the second pin, wherein the reverse ESD protection circuit comprises a first diode of a second type having a cathode electrically connected to the first pin, wherein a capacitance between the substrate and the anode of the first diode of the first type is less than a capacitance between the substrate and a cathode of the first diode of the first type, and wherein a capacitance between the substrate and the cathode of the first diode of the second type is less than a capacitance between the substrate and an anode of the first diode of the second type.