| 发明名称 | Semiconductor devices and methods of fabricating the same | ||
| 摘要 | Provided are semiconductor devices and methods of fabricating the same. The semiconductor device may include lower wires, upper wires crossing the lower wires, select elements provided at intersections between the lower and upper wires, and memory elements provided between the select elements and the upper wires. Each of the memory elements may include a lower electrode having a top width greater than a bottom width, and a data storage layer including a plurality of magnetic layers stacked on a top surface of the lower electrode and having a rounded edge. | ||
| 申请公布号 | US9496488(B2) | 申请公布日期 | 2016.11.15 |
| 申请号 | US201314070471 | 申请日期 | 2013.11.01 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Kwon Hyungjoon;Oh Sechung;Urazaev Vladimir;Tokashiki Ken;Park Jongchul;Baek Gwang-Hyun;Seo Jaehun;Lee Sangmin |
| 分类号 | H01L43/08;H01L27/22;H01L45/00;H01L27/24 | 主分类号 | H01L43/08 |
| 代理机构 | Renaissance IP Law Group LLP | 代理人 | Renaissance IP Law Group LLP |
| 主权项 | 1. A semiconductor device comprising lower wires, upper wires crossing the lower wires, a plurality of select elements provided at intersections between the lower and upper wires, and memory elements provided between the select elements and the upper wires, wherein each of the memory elements comprises: a lower electrode having a top width greater than a bottom width thereof; and a data storage layer having a rounded edge and including a plurality of magnetic layers stacked on a top surface of the lower electrode, wherein a lowest point of the data storage layer is located at a level lower than an uppermost surface of the lower electrode. | ||
| 地址 | KR | ||