| 摘要 |
PURPOSE:To form the lower layer line of extremely low contact resistance and small wiring resistance by a method wherein the connection of metal silicide wirings is performed to impurity diffused regions via low seat resistance layers. CONSTITUTION:An N<+> type source region 6a, an N<+> type region 6'b and an N<+> type polycrystalline Si gate electrode 5' are formed on a P type Si substrate 3 whereon element isolation insulation film 1 and P<+> channel cut regions 2 are formed. Via contact windows 9 of the lower layer PSG film 8, the second impurity, e.g. arsenic ion (As<+>) is implanted selectively into the surface layer part of the source region 6'a and the drain region 6'b, i.e. the high seat resistance layer 11. A MoSi2 wiring patterns 13 and a layer PSG film 14 are formed, the second As<+> implanted region is activated by heating, and thus the N<+> type low seat resistance regions 12' are formed on the surface layer part of the source and drain regions 6'a and 6'b. |
