| 摘要 |
A semiconductor housing particularly useful for very high current devices, e.g. transistors and G.T.O. thyristors, in which a control lead to the base or gate of the device, which also has to carry a relatively high current, passes through an insulating wall of the housing. This control lead is enclosed within a tube which passes through an insulating wall of the housing and which is hermetically sealed to it, the tube is also hermetically sealed to the conductor at either end. The coefficient of expansion of the tube is chosen so as to be substantially the same as the coefficient of expansion of the material of the insulating wall, which may be made of ceramic material or the like. The arrangement avoids corrosion effects as a result of the entrapment of plating salts etc. which are known to adversely affect the assembly and especially the electrical performance of the control lead connection. |
