发明名称 METHOD OF POLISHING SEMICONDUCTOR WAFER
摘要 PURPOSE:To facilitate peeling a sheet off without applying any force to the sheet and a semiconductor wafer by a method wherein the rear surface of a semiconductor wafer is polished and the wefer is dipped in liquid in which viscous material is soluble and the sheet is peeled off when the viscous material is dissolved. CONSTITUTION:Resist is applied to the surface of a semiconductor wafer 1 as viscous material 2 and baked. Then a sheet 3 with a large number of holes 4 is applied. The sheet in which a large number of holes with diameters of, for instance, 50-500 mumphi is employed. Then, in this state, the rear surface is polished by a surface grinder or the like and the thickness of the semiconductor wafer becomes a predetermined value. As the holes provided in the sheet are minute, the vibration absorbing effect of the sheet is not degraded. Then, while the sheet is adhering, the wafer is dipped in liquid such as acetone in which the resist is soluble and subjected to an ultrasonic treatment. As the acetone reaches the resist through a large number of holes of the sheet and dissolves the resist, the sheet is peeled off naturally.
申请公布号 JPS62299034(A) 申请公布日期 1987.12.26
申请号 JP19860142070 申请日期 1986.06.18
申请人 MATSUSHITA ELECTRONICS CORP 发明人 OKAMOTO TOMIO
分类号 H01L21/304;B24B1/00 主分类号 H01L21/304
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