| 摘要 |
PURPOSE:To obtain a practically usable SOI film by forming a monocrystalline silicon film whose crystallinity is good even after separation from a speed by a method wherein the silicon film on an insulating layer is melted by being illuminated and scanned by means of two laser beams, i.e. a main laser beam and an auxiliary laser beam, so as to make the film monocrystalline. CONSTITUTION:When an SOI film is formed by illuminating a silicon film 3 formed on an insulating layer 2 by means of a laser beam so as to make this film monocrystalline, the silicon film 3 is made monocrystalline by an illuminating process and a scanning process using a main laser beam which are following by the illuminating process and the scanning process using an auxiliary laser beam. For example, the silicon oxide film 2 is formed on the monocrystalline silicon substrate 1; furthermore, the polycrystalline silicon film 3 is deposited and a stripe-shaped silicon nitride film 5 as an antireflection film is formed on the film. The laser beams radiated by a main laser oscillator and an auxiliary oscillator 7, 8 illuminate the surface of the substrate in such a way that the distance between their respective centers is 70-120mum; the laser beams are scanned by moving an X-Y stage 6 from a speed part 4 along the direction of the stripe-shaped pattern at the silicon nitride film 5.
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