| 摘要 |
PURPOSE:To detect and to judge the end point of an etching operation during an etching process accurately by a method wherein a subsystem to detect the end point of the etching operation is installed in a position where the center of a wafer is situated on an optical axis of the subsystem to detect the end point of the etching operation. CONSTITUTION:The end point of an etching operation of a wafer 4 placed inside an etching process chamber 1 is detected by measuring the change in the light-emitting strength of a plasma generated inside the etching process chamber 1. At this dry etching system equipped with the subsystem to detect the end point of the etching operation, components 7-11 for the subsystem to detect the end point of the etching operation are installed in a position where the center of the wafer 4 is situated on an optical axis of the components 7-11 for the subsystem to detect the end point of the etching operation. For example, the light, with a wavelength of 740 nm, emitted near the surface of the wafer 4 is received by a monochromator 8 through a lighting window 6 and is separated; the change in the intensity of emitted light with the passage of time is measured by using a photomultiplier tube 9; an output signal is detected by using a device 11 to judge the end point so that the progress of the etching operation can be monitored.
|
