Method for forming pattern by using langmuir-blodgett film.

摘要

A method of forming a pattern is disclosed which comprises the steps of: forming a metal-containing Langmuir-Blodgett film (4, 4 min ) on a substrate (1) through a thin film (3, 2 min ) to be subjected to patterning; exposing the Langmuir-Blodgett film to an energy beam (6, 6 min ) so that the Langmuir-Blodgett film is selectively irradiated with the energy beam; dissolving the unirradiated part of the Langmuir-Blodgett film to form a pattern of the Langmuir-Blodgett film; and selectively etching the thin film (3, 2 min ) with reactive ions (7, 7 min ) by using the pattern of the Langmuir-Blodgett film as a mask.