| 摘要 |
<p>The present invention is a process for very low temperature chemical vapor deposition of silicon dioxide, comprising the steps of a) heating a substrate upon which silicon dioxide is to be deposited to a temperature in the range of approximately 150 to 500 DEG C in a vacuum maintained at a pressure in the range of approximately 50 to 750mTorr; b) introducing into said vacuum an organosilane containing feed and an oxygen containing feed, said organosilane containing feed consisting essentially of one or more compounds having the general formula: <CHEM> wherein R<1> and R<2> are independently H, alkyl, alkenyl, alkynyl, or aryl, having C1 to C6, but only one of R<1> and R<2> can be H, or R<1> and R<2> can be connected by an alkyl chain Cx(R<3>)2, where R<3> is independently H, CxH2x+1 and x = 1-6, and R<4> is independently H, CyH2y+1 where y = 1-6; and c) maintaining said temperature and vacuum thereby causing a thin film of silicon dioxide to deposit on the substrate.</p> |
