| 摘要 |
PROBLEM TO BE SOLVED: To raise reliability of the interlayer insulating film of a semiconductor device by preventing partially cavities from occurring even if there is a step difference on a board caused by, for example. wiring, etc. SOLUTION: This is a manufacturing method of a semiconductor device possessing a process of forming a first flattening processing film 16 on the substrate 11 having lower layer wiring 12, etc., a first heat treatment process for fluidifying the first flattening processing film 16, a process of forming an interlayer insulating film 20 on the first flattening processing film 16, a process of forming a second flattening processing film 21 on the interlayer insulating film 20, and a second heat treatment process for fluidifying the second flattening processing film 21. At this time, a water processing process for bringing the surface of the first flattening processing film 16 into contact with warm water is performed before formation of the interlayer insulating film 20 after the first heat treatment process.
|
