Semiconductor device with multilayer interconnection having HSQ film with implanted fluorine and fluorine preventing liner

摘要

A semiconductor device with a multilevel interconnection has hydrogen silsesquioxane films which are made porous by etching action of hydrogen fluoride or by ion-implantation of impurities containing fluorine, as an interlayer insulating film for filling up a space between wires. Consequently, a dielectric constant of HSQ is low and wiring capacitance of the multilayer interconnection can be reduced.