TRENCH GATE POWER DEVICE USING HYDROGEN ANNEALING AND SELF-ALIGNED TECHNOLOGY

摘要

PURPOSE: A trench gate power device using hydrogen annealing and self-aligned technology is provided to remarkably reduce fabricating cost, by using three masks of fabricating a trench gate power metal oxide semiconductor field effect transistor(MOSFET), and to improve on-resistance by forming a source while a sidewall oxide layer and the self-aligned technology are used. CONSTITUTION: A hydrogen annealing process is performed regarding a trench to round the corner portion of the trench so that a uniform oxide layer is grown on the trench to improve an electrical characteristic. The annealing process is performed by using a pull-back region which is generated by removing a trench sidewall oxide layer.