| 摘要 |
In order to attain a light shutter device capable of individually suppressing variations in quantity of transmitted light among light shutter elements regardless of differences in position of a light shutter element and pattern of electrodes around a light shutter element on a substrate, a light shutter device including a group of light shutter elements 31a, 31b, 31c and 31d formed on a light shutter chip 30 made of PLZT has a construction in which an electrode gap is set wider in a element in which an electric field acts more strongly to equalize half wavelength voltages of elements almost to the same level since electric fields acting on the elements are different in strength from each other even under a prescribed voltage applied between a common electrode 32 and each of individual electrodes 33. To be detailed, an electrode gap of an element 31c having a weaker electric field is comparatively set narrower, whereas an electrode gap of an element 31d having a stronger electric field is set comparatively wider. Moreover, a shape of electrodes of each element are altered so as to make half wavelength voltages of elements almost equal.
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