| 摘要 |
PROBLEM TO BE SOLVED: To enable a circuit to operate at a high speed under a low-power supply voltage, and to reduce power consumption at standby time of an LSI. SOLUTION: The semiconductor regions of P-type well regions 2 and 20, with which transistors Qn1 and Qn2 are formed, are mutually electrically disconnected. The substrate potential of the transistor Qn1 is set to 0 V by a first substrate bias circuit VBGEN1 and the substrate potential of the transistor Qn2 is set to -1 V by a second substrate bias circuit VBGEN2. At standby, the substrate potential of each of transistors Qn1 and Qn2 is set to a high substrate potential, such as -5 V.
|
