METHOD OF FABRICATING FLASH MEMORY CELL

摘要

PURPOSE: A method of fabricating a flash memory cell is provided to increase an area of a floating gate by forming the inside of the floating gate poly with a concavo-convex shape. CONSTITUTION: A tunnel oxide, a floating gate, and a TEOS oxide layer are sequentially deposited on a silicon substrate. A photo define process is performed. The oxide layer formed on a floating gate poly(12) is etched according to a pattern. A nitride layer is deposited thereon. A dry etch-back process for the nitride layer is performed. A nitride spacer is formed by performing the dry etch-back process for the nitride layer. A dry etching process for the floating gate poly and the TEOS oxide layer is performed by using the nitride spacer as a mask. A concavo-convex portion is formed on the inside of the floating gate poly.