发明名称 |
APPARATUS AND METHOD FOR PROCESSING RESIST DEVELOPMENT, AND APPARATUS AND METHOD FOR PROCESSING SURFACE |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and method for processing resist development, and an apparatus and method for processing surface precisely with lens dispersion and finely processing resist development within a short period of time by use of supercritical fluid such as carbon dioxide or the like which does not require waste processing facility for a chemical liquid. SOLUTION: The development chamber houses a resist substrate having a resist after exposure on the substrate and develops the resist after exposure by the use of the developing solvent comprising the supecritical fluid. The resist development processing apparatus has the supercritical fluid container containing the supercritical fluid connected to the development chamber through a valve. COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004172261(A) |
申请公布日期 |
2004.06.17 |
申请号 |
JP20020334781 |
申请日期 |
2002.11.19 |
申请人 |
HITACHI SCI SYST LTD |
发明人 |
TAKASU HISAYUKI;MIYAZAWA KOICHI;IWATANI TORU |
分类号 |
G03F7/30;G03D3/00;G03F7/32;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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