| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for facilitating manufacture of field effect semiconductor devices, capable of employing a carbon nanotube having reduced defect in wall face structure and proper characteristics, having a current passage, such as a channel layer dispersed uniformly with the carbon nanotubes and exhibiting superior device characteristics such as high mobility. SOLUTION: The process of manufacturing a field effect semiconductor device, e.g. a field effect transistor 6, employing proper characteristic carbon nanotube substantially consisting only of a carbon 6 member ring having reduced defect in wall face structure and proper characteristics in a channel layer 5 comprises a step of preparing a dispersion solution of carbon nanotube, a step of applying the dispersion solution in a specified pattern, and a step of forming a channel layer 5 consisting only of carbon nanotube by drying the dispersion solution. COPYRIGHT: (C)2005,JPO&NCIPI |
