| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern-forming method which can form a desired pattern on a substrate to be processed, by conveniently improving the wettability of a resist with a developer, without causing the process cost to increase. SOLUTION: A silicon dioxide film 2, an antireflection coating 3, and the resist film are formed on a semiconductor substrate 1, in this order. The resist film comprises the resist film of a chemical amplification type containing an alkali insoluble resin, in which an acid unstable group is introduced into at least part of functional groups of the base polymer, having a contact angle to the water of >75°and soluble in an alkaline aqueous solution and an acid generating agent. After the resist film is exposed and developed, a rectangular resist pattern 7 is obtained by performing developing processing. The developing processing is performed using a developer, in which the same resin as the alkali soluble resin is added to the alkaline aqueous solution. COPYRIGHT: (C)2005,JPO&NCIPI |
