发明名称 |
Polymeer voor bovenste anti-reflecterende deklaag, werkwijze voor het bereiden daarvan en samenstelling van een bovenste anti-reflecterende deklaag die het polymeer omvat. |
摘要 |
A top anti-reflective coating (ARC) polymer is new. The ARC polymer has a weight-average molecular weight of 1000-1x10 6>. A top ARC polymer of formula (I) is new. The ARC polymer has a weight-average molecular weight of 1000-1x10 6>. R1-R3 : H or Me; and a-c : mole fraction of each monomer, i.e. 0.05-0.9 Independent claims are also included: (A) preparation of ARC polymer (I); (B) a top ARC composition comprising ARC polymer (I); and (C) formation of a pattern of semiconductor device by applying a photoresist to a semiconductor substrate, applying ARC composition on top of the photoresist and baking the composition to form a top anti-reflective coating, and exposing the photoresist to light and developing the exposed photoresist to form a photoresist pattern. [Image]. |
申请公布号 |
NL1028255(A1) |
申请公布日期 |
2005.10.31 |
申请号 |
NL20051028255 |
申请日期 |
2005.02.11 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JAE-CHANG JUNG |
分类号 |
G03F7/11;C08F220/04;C08F220/06;C08F220/10;C08F220/12;C08F220/18;C08F220/28;C08G61/02;C08L33/06;C09D5/32;C09D133/08;G03F7/00;G03F7/09;H01L21/027;H01L21/4763 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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