发明名称 PLASMA PROCESSING METHOD AND STORAGE MEDIUM
摘要 PROBLEM TO BE SOLVED: To provide a technology for performing reduction treatment of oxides formed on the surface of an electrode or an interconnect composed of tungsten surely by active species produced by activating ammonia gas by plasma without forming a tungsten nitride film on the surface of tungsten. SOLUTION: When reduction treatment is carried out using a vertical heat treatment apparatus provided, in a region deviating from the treatment atmosphere in a vertical processing container in the radial direction and facing the treatment atmosphere, with a plasma generation region formed along the treatment atmosphere, and plasma electrodes arranged oppositely while holding the plasma generation region and extending along the plasma generation region, the amount of ammonia gas supplied to the plasma generation region is set between 500-10,000 sccm, the high frequency being applied to the plasma generation region is set between 20-500 W, the pressure of treatment atmosphere is set below 13.3×10<SP>2</SP>Pa, and the treatment time is set between 1 sec and 10 min. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008258210(A) 申请公布日期 2008.10.23
申请号 JP20070095753 申请日期 2007.03.30
申请人 TOKYO ELECTRON LTD 发明人 CHOU PAO-HWA;HASEBE KAZUHIDE
分类号 H01L29/423;H01L21/28;H01L21/31;H01L21/316;H01L21/3205;H01L29/49 主分类号 H01L29/423
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