| 摘要 |
PURPOSE:To form a predetermined positive type resist pattern onto a stratiform conductor film with a junction of metals of a different kind by preventing an electrolytic reaction of Al generated during a dipping phenomenon of a positive type resist. CONSTITUTION:The whole surface of a planar type transistor element substrate 1, the surface thereof to which prescribed regions are formed is coated with a silicon oxide film 2 and to which contact windows are bored, is each coated continuously with a TiW layer 5 and an Al layer 6 in approximately 0.1mum and approximately 0.5mum, and a resist layer 7 is formed to the surface and side surfaces of the substrate 1. The positive type resist pattern 8 is formed through normal photolithography. Al does not dissolve because the back and the side surfaces are coated with the resist 7 as an insulator at that time. The Al layer 6 and the TiW layer 5 are dry-etched in plasma by CCl4, and the resist is exfoliated in O2 plasma, thus forming a desired wiring pattern. |
