| 摘要 |
PURPOSE:To enhance precision of etching by applying a magnetic field from the circumference to ionic reaction nuclei for etching. CONSTITUTION:When high-frequency electric power is applied to parallel plane electrodes 2, 3 in a chamber 1 by a high-frequency electric power source 4, a high-frequency electric field is generated between the electrodes 2, 3 to generate gas plasma, and because CF4 is used as reaction gas, CF3<+> is generated as the ionic reaction nucleus, and anisotropic etching is performed to the poly-silicon film or the SiO2 film of a wafer 5. Because the magnetic field is applied from all directions of the outside circumferential side of the chamber 1 according to a coil 7, force toward the central direction of the chamber 1 is applied to CF3<+>, and CF3<+> is concentrted to the upper part of the wafer 5. Accordingly, the quantities of CF3<+> to contribute to etching reaction of the wafer 5 is increased, and the etching rate is enhanced. |
