SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To easily attain the speed-up of action and the element isolation in the of integration by reducing the leakage current of transistors by a method wherein a superlattice layer comes into contact with a crystal layer of larger effective forbidden band width in the neigborhood of both ends of at least the gate in the width direction. CONSTITUTION:A mixed-crystallized region 21 can be obtained by mixed-crystallization of a superlattice layer 13 by locally annealing the surface of a wafer with the arrangement of the superlattice layer 13 of GaAs/Al As with argon laser at a spot diameter of 5mum or less. This region 21 can be laid not only at both sides of the gate width but over the whole region in the periphery of the element. In this case, the electric isolation of each element can be easily attained by the hetero barrier of the superlattice region 13 of the element based on a large forbidden band width of the mixed-crystallized region 21 in a structure with a plurality of pieces arranged on the same substrate of these FET's, so called an integrated structure.