| 摘要 |
PURPOSE:To realize a stable self-exciting oscillation while maintaining a stable basic lateral mode oscillation by a method wherein a double-hetero junction structure is provided along the protruded surface of a substrate and a current blocking layer which has a light absorbing function is provided between the guide layer and the cladding layer in the structure. CONSTITUTION:After a protruded normal mesa-stripe 12 is formed on an N-type GaAs substrate 10 by an etching method, the 2nd and the 1st cladding layers 13 and 14 made of N-type AlGaAs, an active layer 15, the 3rd cladding layer 16 made of P-type AlGaAs, a guide layer 17 and a current blocking layer 18 made of N-type GaAs are successively formed by a vapor phase deposition method with organic metal compounds continuously. An SiO2 film 19 is formed over the whole surface and an aperture is drilled in the film 19 at the position corresponding to the protruded part and etching is performed to expose the guide layer 17. After the SiO2 film 19 is removed, the 4th cladding layer 20 made of P-type AlGaAs and a cap layer 21 made of P-type GaAs are formed and P-type side and N-type side electrodes 22 and 23 are applied.
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