| 摘要 |
<p>PURPOSE:To raise the manufacture yield, and to improve the display contrast by connecting a gate electrode, a drain electrode, etc. to a common electrode line, and connecting electrically its common electrode lines by an inter-common electrode connecting line. CONSTITUTION:On a substrate, an indium tin oxide film is formed, and a source electrode 5, a display electrode 6, and a common electrode line 4 are formed by patterning by a photoresist method (P method). Subsequently, a metallic film of aluminum, etc. is spattered, and an inter-common electrode connecting line 7 for connecting a drain electrode 3 and the common electrode line 4 is formed by the P method. Next, an amorphous silicon film and a silicon nitride film are formed. Thereafter, a metallic film of molybdenum, etc. is vapor- deposited, and a gate electrode 1 is formed by the P method. In such a state, by bringing the amorphous silicon film and the silicon nitride film to dry etching, a thin film transistor is obtained. Accordingly, since a step difference of an intersection part of a wiring is reduced at the time of manufacture, the manufacture yield is raised, and a defect caused by a disconnection can be eliminated.</p> |
