发明名称 STRUCTURE OF DETECTING ELEMENT
摘要 PURPOSE:To obtain a high sensitivity and selectivity and fast responsiveness by adopting a structure which has solns. on both sides of a thin dielectric film and includes reference electrodes in the solns. CONSTITUTION:The thin films of silicon dioxide is formed on a silicon substrate 2 having many window regions 1. One surface thereof comes into contact with an electrolyte 4 contg. enzyme and the other surface with an electrolyte 5 through the regions 1. The former is isolated from the outdoor air by a thin porous 'Teflon(R)' film 6. Further, reference electrodes 7 are arranged in both the electrolytes, respectively. The entire part of the system is sealed by a partition wall 8. Many pieces of such systems are connected in series or parallel. Since these systems oscillate in synchronization with each other, the S/N of an output signal is high and since the area of the regions 1 is small, the mechanical strength of the thin film 3 is high and the frequency of the self-excited oscillation is high. The detection of a deviation in the detection signals is thus facilitated. The high sensitivity and the high selectivity are obtd. in this way and the high-speed operation is enabled.
申请公布号 JPH02227651(A) 申请公布日期 1990.09.10
申请号 JP19890048112 申请日期 1989.02.28
申请人 SEIKO EPSON CORP 发明人 SHIMOBAYASHI TAKASHI
分类号 G01N27/26;G01N27/327;G01N27/416 主分类号 G01N27/26
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