Sensing circuit for resistive memory cells

摘要

A sensing system may include a sense amplifier, a sensing circuit configured to sense a current difference, a data cell selectively coupled to the sensing circuit, a first reference cell selectively coupled to the sensing circuit, and a second reference cell selectively coupled to the sensing circuit. The resistance of the first reference cell and the second reference cell are different.

主权项

1. An apparatus comprising:
a sense amplifier configured to input a first voltage output and a second voltage output; a sensing circuit configured to sense a voltage difference between the first voltage output and the second voltage output and input a third voltage output and a fourth voltage output, the sensing circuit coupled to the first voltage output and the second voltage output and configured to cancel an offset voltage in a dual stage sensing operation; a data cell coupled to the third voltage output and the fourth voltage output; a first reference cell selectively coupled to the fourth voltage output; and a second reference cell selectively coupled to the third voltage output, wherein the data cell is configured the same as the first reference cell and the second reference cell to form a regular array structure.