发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
According to one embodiment, a manufacturing method of a semiconductor device, comprising: forming a first nitride semiconductor layer on a substrate using a first temperature; decreasing a substrate temperature to a second temperature lower than the first temperature, after the forming the first nitride semiconductor layer; forming a second nitride semiconductor layer on the first nitride semiconductor layer using the second temperature; increasing the substrate temperature to a third temperature higher than the first temperature, after the forming the second nitride semiconductor layer; and forming a third nitride semiconductor layer on the second nitride semiconductor layer using the third temperature. |
申请公布号 |
US2016268130(A1) |
申请公布日期 |
2016.09.15 |
申请号 |
US201514842191 |
申请日期 |
2015.09.01 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Sugiyama Naoharu;Isobe Yasuhiro;Hung Hung;Yoshioka Akira |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method of a semiconductor device, comprising:
forming a first nitride semiconductor layer on a substrate using a first temperature; decreasing a substrate temperature to a second temperature lower than the first temperature, after the forming the first nitride semiconductor layer; forming a second nitride semiconductor layer on the first nitride semiconductor layer using the second temperature, the second nitride semiconductor layer formed of a material identical to a material of the first nitride semiconductor layer; increasing the substrate temperature to a third temperature higher than the first temperature, after the forming the second nitride semiconductor layer; and forming a third nitride semiconductor layer on the second nitride semiconductor layer using the third temperature, the third nitride semiconductor layer formed of a material identical to the material of the first nitride semiconductor layer. |
地址 |
Tokyo JP |