METHOD FOR PROCESSING WIDE-BANDGAP SEMICONDUCTOR SUBSTRATE AND APPARATUS THEREFOR

摘要

There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece (5) or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (3). In the presence of water (1), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.

主权项

1: A processing method for a wide-bandgap semiconductor substrate in which a single crystal, which is SiC, GaN, AlGaN, or AlN, is a work piece, and a surface of the work piece is planarized or processed into an arbitrary curved surface using no abrasive grain or no abrasive, the method comprising:
using a catalytic substance having a function of promoting direct hydrolysis of the work piece or promoting hydrolysis of an oxide film on the surface of the work piece as a processing reference plane; in presence of water, bringing the work piece into contact with or extremely close to the processing reference plane at a predetermined pressure and relatively moving the work piece and the processing reference plane to each other; by a catalyst function of the processing reference plane, advancing a process of direct hydrolysis of the surface of the work piece or a process of oxidation of the surface of the work piece and hydrolysis of the oxide film in priority from a projection on the surface close to the processing reference plane; and removing a decomposition product.