发明名称 |
METHODS AND APPARATUS FOR IN-SITU CLEANING OF COPPER SURFACES AND DEPOSITION AND REMOVAL OF SELF-ASSEMBLED MONOLAYERS |
摘要 |
A method of processing includes: providing a substrate having a contaminant material disposed on the copper surface to a substrate support within a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H2) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H2) gas; exposing the substrate to the dissociated hydrogen (H2) gas to remove at least some of the contaminant material from the copper surface; cooling the one or more filaments to room temperature; exposing the substrate in the HWCVD chamber to one or more chemical precursors to deposit a self-assembled monolayer atop the copper surface; and depositing a second layer atop the substrate. |
申请公布号 |
WO2017040722(A1) |
申请公布日期 |
2017.03.09 |
申请号 |
WO2016US49785 |
申请日期 |
2016.08.31 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
VISSER, Robert Jan;ARNEPALLI, Ranga Rao;GORADIA, Prerna |
分类号 |
H01L21/02;H01L21/205;H01L21/324 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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