SEMICONDUCTOR MEMORY DEVICE

摘要

According to one embodiment, a semiconductor memory device includes a substrate; a stacked body provided on the substrate and including a plurality of electrode layers; a semiconductor film; a charge storage film; an interconnect layer provided in the stacked body, the interconnect layer; a first contact portion; a first metal layer; and a second metal layer. The interconnect layer includes: a first portion including silicon; and a second portion provided on the first portion and including metal. The first metal layer is provided on the first contact portion. The second metal layer is provided on the first metal layer, and electrically connected to the interconnect layer.

主权项

1. A semiconductor memory device, comprising:
a substrate; a stacked body provided on the substrate and including a plurality of electrode layers separately stacked each other; a semiconductor film provided in the stacked body and extending in a stacking direction of the stacked body, the semiconductor film electrically connected to the substrate; a charge storage film provided in the stacked body, the charge storage film provided between the plurality of electrode layers and the semiconductor film; an interconnect layer provided in the stacked body, the interconnect layer extending in the stacking direction and in a first direction crossing the stacking direction, and electrically connected to the semiconductor film via the substrate, the interconnect layer including:
a first portion including silicon; anda second portion provided on the first portion and including metal; a first contact portion provided on the stacked body, and electrically connected to the interconnect layer; a first metal layer provided on the first contact portion and extending in the first direction, the first metal layer electrically connected to the interconnect layer via the first contact portion; and a second metal layer provided on the first metal layer, and electrically connected to the interconnect layer.