DATA RETENTION CHARGE LOSS AND READ DISTURB COMPENSATION IN SOLID-STATE DATA STORAGE SYSTEMS

摘要

A data storage device includes a solid-state memory including memory cells and a controller configured to perform a first programming scheme that programs a first subset of the cells to a first voltage state using a first target voltage, programs a second subset to a second voltage state using a second target voltage higher than the first target voltage, programs a third subset to a third voltage state using a third target voltage higher than the second target voltage, and programs a fourth subset to a fourth voltage state using a fourth target voltage higher than the third target voltage. A difference in voltage between the fourth target voltage and the third target voltage may be greater or less than a difference in voltage between the third target voltage and the second target voltage and/or a difference in voltage between the second target voltage and the first target voltage.

主权项

1. A data storage device comprising:
a solid-state non-volatile memory including memory cells; and a controller configured to:
perform a first programming scheme that at least:
programs a first subset of the memory cells to a first voltage state associated with a first target voltage;programs a second subset of the memory cells to a second voltage state associated with a second target voltage higher than the first target voltage;programs a third subset of the memory cells to a third voltage state associated with a third target voltage higher than the second target voltage; andprograms a fourth subset of the memory cells to a fourth voltage state associated with a fourth target voltage higher than the third target voltage; wherein a difference in voltage between the fourth target voltage and the third target voltage is greater than at least one of:
a difference in voltage between the third target voltage and the second target voltage; anda difference in voltage between the second target voltage and the first target voltage.