Nitride light-emitting diode

摘要

A nitride light-emitting diode includes a substrate, an n-type nitride layer, a light-emitting layer, a p-type nitride layer, a p+ layer, an AlInN layer, an n+ layer, and an ITO transparent electrode. A tunneling structure with an AlInN intermediate layer is adopted as the contact layer, which generates polarization charges at the tunneling junction interface and maintains effective width of the depletion region, thereby increasing tunneling probability of holes and reducing contact resistances.

主权项

1. A nitride light-emitting diode, comprising:
a substrate; an n-type nitride layer over the substrate; a light-emitting layer over the n-type nitride layer; a p-type nitride layer over the light-emitting layer; a p+ nitride layer over the p-type nitride layer; an AlInGaN gradient layer over the p+ nitride layer; and an n+ nitride layer over the AlInGaN gradient layer; wherein the p+ nitride layer, the AlInGaN gradient intermediate layer and the n+ nitride layer form a tunneling junction; and wherein forbidden band width of the AlInGaN gradient layer is configured to be smaller than forbidden band widths of the p+ nitride layer and the n+ nitride layer to thereby increase tunneling probability.