发明名称 | Polishing composition | ||
摘要 | A polishing composition of the present invention contains a water-soluble polymer having a hydrophilic group, and abrasive grains. A hydrophobic silicon-containing part after being polished with the polishing composition has a water contact angle lower than that of the hydrophobic silicon-containing part after being polished with another composition having the same makeup as the polishing composition except that the water-soluble polymer is not contained therein. Examples of the water-soluble polymer include polysaccharides and alcohol compounds. Another polishing composition of the present invention contains abrasive grains having a silanol group, and a water-soluble polymer. When this polishing composition is left to stand for one day in an environment at a temperature of 25° C., the water-soluble polymer is adsorbed on the abrasive grains at 5,000 or more molecules per 1 μm2 of surface area of the abrasive grains. Examples of this water-soluble polymer include nonionic compounds having a polyoxyalkylene chain. | ||
申请公布号 | US9640407(B2) | 申请公布日期 | 2017.05.02 |
申请号 | US201214123889 | 申请日期 | 2012.05.31 |
申请人 | FUJIMI INCORPORATED | 发明人 | Yamato Yasuyuki;Takahashi Youhei;Akatsuka Tomohiko |
分类号 | H01L21/306;H01L21/3105;H01L21/321;C09K3/14;C09G1/02 | 主分类号 | H01L21/306 |
代理机构 | Foley & Lardner LLP | 代理人 | Foley & Lardner LLP |
主权项 | 1. A polishing composition used in polishing an object having a hydrophobic silicon-containing part and a hydrophilic silicon-containing part, the polishing composition comprising a water-soluble polymer having a hydrophilic group, and abrasive grains, wherein the polishing composition does not contain an oxidizing agent or a metal corrosion inhibitor, wherein the water-soluble polymer is polyglycerol, pentanol, polypropylene glycol, a polyoxyethylene alkylene diglyceryl ether, a polyoxyethylene alkyl ether, or polyoxyethylene sorbitan monooleate, wherein the abrasive grains are formed of colloidal silica on which an organic acid is immobilized, wherein the abrasive grains have an average primary particle diameter of 5 nm or more and 100 nm or less, wherein the abrasive grains have an average secondary particle diameter of 150 nm or less, wherein the polishing composition has a pH of 6 or less, and wherein the hydrophobic silicon-containing part after the object is polished with the polishing composition has a water contact angle lower than that of the hydrophobic silicon-containing part after the object is polished with another composition having the same makeup as the polishing composition except that the water-soluble polymer is not contained therein. | ||
地址 | Kiyosu-Shi JP |